 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII * High Collector Emitter Sustaining Voltage -- VCEO(sus) = 120 Vdc (Min) -- 2N6379 * High DC Current Gain -- hFE = 30 - 120 @ IC = 20 Adc hFE = 10 (Min) @ IC = 50 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc * Fast Switching Times @ IC = 20 Adc tr = 0.35s (Max) ts = 0.8 s (Max) tf = 0.25 s (Max) * Complement to 2N6274-77 * Indicates JEDEC Registered Data. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data . . . designed for use in industrial-military power amplifier and switching circuit applications. Preferred devices are Motorola recommended choices for future use and best overall value. High-Power PNP Silicon Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS *MAXIMUM RATINGS REV 7 PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Emitter Voltage Collector-Base Voltage Characteristic Rating 100 150 200 250 50 0 0 25 50 Figure 1. Power Derating TC, CASE TEMPERATURE (C) 75 100 125 150 Symbol Symbol TJ, Tstg VCB VCEO VEB IC JC IB PD 175 200 - 65 to + 200 Value 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS Max 250 1.43 50 100 120 140 0.7 6.0 20 *Motorola Preferred Device 2N6379* CASE 197A-05 TO-204AE (TO-3) Order this document by 2N6379/D Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII I III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6379 * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) *SWITCHING CHARACTERISTICS (Figure 2) DYNAMIC CHARACTERISTICS *ON CHARACTERISTICS(1) *OFF CHARACTERISTICS NOTE: For information on Figures 3 & 6, RB and R C were varied to obtain desired test conditions. Fall Time Storage Time Rise Time *Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) *Current-Gain -- Bandwidth Product(2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 2.0 Adc) (IC = 50 Adc, IB = 10 Adc) Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 2.0 Adc) (IC = 50 Adc, IB = 10 Adc) DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) (IC = 50 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 90% Rated VCB, VBE(off) = 1.5 Vdc) (VCE = 90% Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 70 Vdc, IB = 0) Collector-Emitter Sustaining Voltage(1) (IC = 50 mAdc, IB = 0) 2 + 19 V RB = 10 OHMS Characteristic (VCC = 80 Vdc, IC = 20 Adc, IB1 = IB2 = 2.0 Adc) VCC + 80 V RC = 4.0 OHMS SCOPE t, TIME (ns) - 21 V 0 tr, tf 10 ns DUTY CYCLE = 0.5% Figure 2. Switching Time Test Circuit 30 s v MR850 + 4.0 V (2) fT = |hfe| * ftest 0.03 0.02 0.5 0.7 1.0 0.1 0.07 0.05 0.3 0.2 0.5 1.0 0.7 2.0 Motorola Bipolar Power Transistor Device Data td @ VBE(off) tr @ VCC = 80 V VCEO(sus) VCE(sat) VBE(sat) Symbol 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) ICEO IEBO ICEX Cob hFE Figure 3. Turn-On Time [ 5.0 V fT ts tr tf Min 120 30 50 30 10 -- -- -- -- -- -- -- -- -- -- -- -- -- 1500 0.25 0.80 0.35 Max -- 120 -- 100 1.8 3.5 1.2 3.0 10 1.0 50 -- -- IC/IB = 10 TJ = 25C 30 Vdc Vdc Vdc pF s s s -- Adc mAdc Adc Adc MHz Unit 50 2N6379 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.02 D = 0.5 0.2 0.1 0.05 0.02 t1 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) t2 P(pk) JC(t) = r(t) JC JC = 0.7C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 100 200 500 1000 2000 DUTY CYCLE, D = t1/t2 20 50 Figure 4. Thermal Response 100 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 2.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) 2N6377 CURVES APPLY BELOW 2N6378 RATED VCEO 2N6379 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 5.0 ms dc TJ = 200C 1.0 ms 100 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 5. Active Region Safe Operating Area 2.0 1.0 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.5 0.7 1.0 tf @ VCC = 80 V ts IB1 = IB2 IC/IB = 10 TJ = 25C 10,000 7,000 5,000 3,000 CAPACITANCE (pF) 2,000 1,000 700 500 300 200 100 0.1 Cob Cib TJ = 25C 20 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 30 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 70 100 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N6379 200 TJ = + 150C hFE, DC CURRENT GAIN 100 70 50 + 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 4.0 TJ = 25C 3.2 2.4 30 A 1.6 5.0 A 10 A 30 20 - 55C VCE = 4.0 V VCE = 10 V 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 0.8 IC = 2.0 A 0 0.05 0.01 0.02 10 0.5 0.7 1.0 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 10 Figure 8. DC Current Gain Figure 9. Collector Saturation Region 2.4 V, VOLTAGE (VOLTS) 2.0 1.6 1.2 V, TEMPERATURE COEFFICIENTS (mV/C) 2.8 TJ = 25C + 3.0 *APPLIES FOR IC/IB + 2.0 t hFE @ VCE + 4.0 V 4 - 55C to + 25C + 25C to + 150C + 1.0 *VC for VCE(sat) 0 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 4.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 - 1.0 VB for VBE 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 - 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages Figure 11. Temperature Coefficients 1000 500 IC, COLLECTOR CURRENT ( A) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 + 0.2 100 VCE = 40 V TJ = 150C IB , BASE CURRENT ( A) 50 20 10 5.0 2.0 1.0 0.5 0.2 - 0.4 - 0.5 0.1 + 0.2 REVERSE + 0.1 0 - 0.1 FORWARD - 0.2 - 0.3 - 0.4 - 0.5 25C 100C TJ = 150C VCE = 40 V 100C 25C REVERSE + 0.1 0 - 0.1 FORWARD - 0.2 - 0.3 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Base Cutoff Region 4 Motorola Bipolar Power Transistor Device Data 2N6379 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K M 0.30 (0.012) L G 1 TQ M Y M -Y- H B -Q- 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE (TO-3) ISSUE J Motorola Bipolar Power Transistor Device Data 5 2N6379 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N6379/D* 2N6379/D |
Price & Availability of 2N6379
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |